跳转到主要内容

Wolfspeed CGH40120F

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET

产品详情

Find similar products  

Compliance

RoHS
Compliant

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
12 A
Current Rating
28 A
Drain to Source Breakdown Voltage
84 V
Drain to Source Voltage (Vdss)
120 V
Efficiency
70 %
Gain
15 dB
Gate to Source Voltage (Vgs)
-10 V
Max Frequency
3 GHz
Max Junction Temperature (Tj)
225 °C
Max Operating Temperature
150 °C
Max Output Power
120 W
Min Operating Temperature
-40 °C
Number of Channels
1
Output Power
120 W
Test Current
1 A
Test Voltage
28 V
Voltage Rating
28 V

购买

Call or Request Quote for Pricing
询价

Need Assistance?

Contact Us