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Wolfspeed CGH40006P

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET

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Compliance

RoHS
Compliant

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
750 mA
Current Rating
3.5 A
Drain to Source Breakdown Voltage
84 V
Drain to Source Voltage (Vdss)
120 V
Efficiency
65 %
Gain
11 dB
Gate to Source Voltage (Vgs)
-10 V
Max Frequency
6 GHz
Max Junction Temperature (Tj)
225 °C
Max Operating Temperature
150 °C
Max Output Power
6 W
Min Operating Temperature
-40 °C
Number of Channels
1
Output Power
8 W
Test Current
100 mA
Test Voltage
28 V
Voltage Rating
28 V

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