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Wolfspeed CG2H40010F

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET

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Dimensions

Height
3.43 mm

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
1.5 A
Drain to Source Breakdown Voltage
84 V
Drain to Source Voltage (Vdss)
120 V
Efficiency
65 %
Gain
16 dB
Gate to Source Voltage (Vgs)
-10 V
Max Frequency
6 GHz
Max Junction Temperature (Tj)
225 °C
Max Operating Temperature
150 °C
Max Output Power
10 W
Min Operating Temperature
-40 °C
Number of Channels
1
Power Dissipation
14 W
Voltage Rating
28 V

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