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Wolfspeed C3M0280090J

Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode

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Compliance

REACH SVHC
No SVHC
RoHS
Non-Compliant

Dimensions

Height
4.82 mm

Physical

Case/Package
TO-263-7
Number of Pins
7

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
11 A
Current Rating
11.5 A
Drain to Source Breakdown Voltage
900 V
Drain to Source Resistance
280 mΩ
Drain to Source Voltage (Vdss)
900 V
Gate to Source Voltage (Vgs)
18 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
50 W
Min Operating Temperature
-55 °C
Number of Channels
1
Power Dissipation
49 W
Threshold Voltage
2.1 V
Turn-Off Delay Time
7 ns
Turn-On Delay Time
4 ns

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