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Wolfspeed C3M0060065D

Silicon Carbide Power 650V MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode

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Dimensions

Height
25.5 mm

Physical

Case/Package
TO-247-3

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
29 A
Current Rating
37 A
Drain to Source Breakdown Voltage
650 V
Drain to Source Resistance
60 mΩ
Drain to Source Voltage (Vdss)
650 V
Gate to Source Voltage (Vgs)
19 V
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
150 W
Min Operating Temperature
-40 °C
Number of Channels
1
Power Dissipation
150 W
Turn-Off Delay Time
17 ns
Turn-On Delay Time
9 ns

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