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Wolfspeed C3M0040120D

1200V silicon carbide MOSFET technology optimized for high performance power electronics applications

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Dimensions

Height
25.5 mm

Physical

Case/Package
TO-247-3

Technical

Continuous Drain Current (ID)
66 A
Drain to Source Breakdown Voltage
1.2 kV
Drain to Source Resistance
40 mΩ
Drain to Source Voltage (Vdss)
40 mΩ
Gate to Source Voltage (Vgs)
19 V
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Min Operating Temperature
175 °C
Number of Channels
-40 °C
Power Dissipation
326 W
Turn-Off Delay Time
25 ns
Turn-On Delay Time
15 ns

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