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Wolfspeed C3M0021120D

Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode

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Dimensions

Height
25.5 mm

Physical

Case/Package
TO-247-3

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
81 A
Current Rating
100 A
Drain to Source Breakdown Voltage
1.2 kV
Drain to Source Resistance
21 mΩ
Drain to Source Voltage (Vdss)
1.2 kV
Gate to Source Voltage (Vgs)
15 V
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
469 W
Min Operating Temperature
-40 °C
Number of Channels
1
Power Dissipation
469 W
Turn-Off Delay Time
72 ns
Turn-On Delay Time
142 ns

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