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Wolfspeed C3M0015065D

Silicon Carbide Power 650V MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode

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Dimensions

Height
25.5 mm

Physical

Case/Package
TO-247-3

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
81 A
Current Rating
120 A
Drain to Source Breakdown Voltage
650 V
Drain to Source Resistance
15 mΩ
Drain to Source Voltage (Vdss)
15 mΩ
Gate to Source Voltage (Vgs)
19 V
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-40 °C
Number of Channels
-40 °C
Power Dissipation
416 W
Turn-Off Delay Time
58 ns
Turn-On Delay Time
22 ns

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