跳转到主要内容

Vishay 2N7002-T1-E3

VISHAY - 2N7002-T1-E3 - MOSFET Transistor, N Channel, 115 mA, 60 V, 7.5 ohm, 10 V, 2.1 V

产品详情

Find similar products  

Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
7.5 Ω

Dimensions

Height
1.02 mm
Length
3.04 mm
Width
1.4 mm

Physical

Case/Package
SOT-23
Contact Plating
Tin
Mount
-55 °C
Number of Pins
3
Weight
1.437803 g

Technical

Continuous Drain Current (ID)
115 mA
Current
15 A
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
7.5 Ω
Drain to Source Voltage (Vdss)
7.5 Ω
Element Configuration
Single
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.12 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Nominal Vgs
2.1 V
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
200 mW
Rds On Max
7.5 Ω
Resistance
7.5 Ω
Threshold Voltage
2.1 V
Turn-Off Delay Time
Compliant
Turn-On Delay Time
8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|85
Voltage
IBS

合规性文件

购买

Call or Request Quote for Pricing
询价

Need Assistance?

Contact Us

Alternative MOSFET