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Toshiba TTA1943(Q)

Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

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Compliance

Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
26 mm
Length
20.5 mm
Width
5.2 mm

Physical

Mount
Through Hole
Number of Pins
3

Technical

Collector Base Voltage (VCBO)
230 V
Collector Emitter Breakdown Voltage
230 V
Collector Emitter Saturation Voltage
-3 V
Collector Emitter Voltage (VCEO)
230 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
-5 V
Frequency
30 MHz
Gain Bandwidth Product
30 MHz
hFE Min
80
Max Collector Current
15 A
Max Frequency
30 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
150 W
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Bulk
Polarity
PNP
Power Dissipation
150 W
Transition Frequency
30 MHz

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