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Toshiba TPHR8504PL,L1Q
产品详情
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Compliance
RoHS
850 µΩ
Dimensions
Height
1 mm
Physical
Case/Package
SOP
Contact Plating
Silver, Tin
Mount
-55 °C
Number of Pins
8
Technical
Continuous Drain Current (ID)
150 A
Drain to Source Breakdown Voltage
340 A
Drain to Source Resistance
700 µΩ
Drain to Source Voltage (Vdss)
700 µΩ
Fall Time
14 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
9.6 nF
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Packaging
Cut Tape (CT)
Power Dissipation
1 W
Rds On Max
850 µΩ
Rise Time
13 ns
Threshold Voltage
1.4 V
Turn-Off Delay Time
Compliant
Turn-On Delay Time
26 ns