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Toshiba TPHR6503PL,L1Q

Trans MOSFET N-CH Si 30V 393A 8-Pin SOP Advance T/R

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Compliance

RoHS
Compliant

Dimensions

Height
1 mm

Physical

Mount
Surface Mount
Number of Pins
8

Technical

Continuous Drain Current (ID)
150 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
410 µΩ
Drain to Source Voltage (Vdss)
410 µΩ
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
10 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Number of Channels
1
Power Dissipation
960 mW
Rds On Max
650 µΩ
Threshold Voltage
1.1 V
Turn-Off Delay Time
100 ns
Turn-On Delay Time
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