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Toshiba TPH12008NH,L1Q

MOSFET N-Ch 80V 1490pF 22nC 12.3mOhm 44A 48W

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Compliance

RoHS
Compliant

Physical

Case/Package
SOP
Mount
Surface Mount
Number of Pins
8

Technical

Continuous Drain Current (ID)
24 A
Drain to Source Breakdown Voltage
80 V
Drain to Source Resistance
10.1 mΩ
Drain to Source Voltage (Vdss)
80 V
Element Configuration
Single
Fall Time
7.4 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.9 nF
Max Operating Temperature
150 °C
Max Power Dissipation
48 W
Min Operating Temperature
-55 °C
Packaging
Digi-Reel®
Power Dissipation
48 W
Rds On Max
12.3 mΩ
Rise Time
5 ns
Turn-Off Delay Time
24 ns

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