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Toshiba TK72E12N1,S1X

Trans MOSFET N-CH Si 120V 179A 3-Pin(3+Tab) TO-220 Magazine

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Compliance

RoHS
4.4 mΩ

Physical

Case/Package
TO-220-3
Mount
Through Hole

Technical

Continuous Drain Current (ID)
72 A
Drain to Source Breakdown Voltage
120 V
Drain to Source Resistance
3.6 mΩ
Drain to Source Voltage (Vdss)
3.6 mΩ
Element Configuration
Single
Fall Time
37 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
8.1 nF
Max Power Dissipation
255 W
Power Dissipation
255 W
Rds On Max
4.4 mΩ
Rise Time
33 ns
Turn-Off Delay Time
120 ns

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