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Toshiba TK10A80E,S4X

Trans MOSFET N-CH Si 800V 10A 3-Pin(3+Tab) TO-220SIS Tube

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Compliance

RoHS
1 Ω

Dimensions

Height
18.1 mm

Physical

Case/Package
TO-220-3
Mount
-55 °C
Weight
6.000006 g

Technical

Continuous Drain Current (ID)
10:00 AM
Drain to Source Breakdown Voltage
10 A
Drain to Source Resistance
700 mΩ
Drain to Source Voltage (Vdss)
700 mΩ
Element Configuration
Single
Fall Time
35 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
2 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Power Dissipation
50 W
Rds On Max
1 Ω
Rise Time
40 ns
Turn-Off Delay Time
140 ns
Turn-On Delay Time
Compliant

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