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Toshiba SSM6L56FE,LM

Transistor MOSFET Array N/P-CH 20V 800mA

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Dimensions

Height
600 µm

Technical

Continuous Drain Current (ID)
800 mA
Drain to Source Breakdown Voltage
20 V
Drain to Source Voltage (Vdss)
20 V
Gate to Source Voltage (Vgs)
8 V
Manufacturer Package Identifier
150 °C
Max Junction Temperature (Tj)
600 µm
Max Operating Temperature
SON6-P-0.50
Number of Channels
150 °C
Power Dissipation
150 mW

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