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Toshiba SSM6K513NU,LF

Trans MOSFET N-CH Si 30V 15A 6-Pin UDFN-B EP T/R

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Compliance

RoHS
Compliant

Dimensions

Height
800 µm

Physical

Mount
Surface Mount

Technical

Continuous Drain Current (ID)
15 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
8 mΩ
Drain to Source Voltage (Vdss)
30 V
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.13 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1.25 W
Number of Channels
1
Power Dissipation
1.25 W
Rds On Max
8.9 mΩ
Turn-Off Delay Time
33 ns
Turn-On Delay Time
28 ns

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