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Toshiba RN4985,LF(CT

NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)

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Compliance

RoHS
Compliant

Physical

Mount
Surface Mount

Technical

Collector Emitter Breakdown Voltage
50 V
Collector Emitter Voltage (VCEO)
300 mV
Max Breakdown Voltage
50 V
Max Collector Current
100 mA
Max Power Dissipation
200 mW
Packaging
Tape & Reel (TR)
Transition Frequency
200 MHz

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