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Toshiba RN1406(TE85L,F)

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

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Compliance

Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
1.1 mm
Length
2.9 mm
Width
1.5 mm

Physical

Mount
Surface Mount
Number of Pins
3

Technical

Collector Emitter Saturation Voltage
300 mV
Collector Emitter Voltage (VCEO)
50 V
Element Configuration
Single
Max Collector Current
100 mA
Max Operating Temperature
150 °C
Min Operating Temperature
-55 °C
Packaging
Tape & Reel
Polarity
NPN

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