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Toshiba HN4C51J(TE85L,F)

Bipolar Transistors - BJT Trans LFreq 120V NPN NPN 0.1A

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Compliance

Radiation Hardening
No
RoHS
Compliant

Physical

Case/Package
SOT-25
Mount
Surface Mount
Number of Pins
5

Technical

Collector Base Voltage (VCBO)
120 V
Collector Emitter Breakdown Voltage
120 V
Collector Emitter Saturation Voltage
300 mV
Collector Emitter Voltage (VCEO)
120 V
Element Configuration
Dual
Emitter Base Voltage (VEBO)
5 V
Gain Bandwidth Product
100 MHz
hFE Min
200
Max Breakdown Voltage
120 V
Max Collector Current
100 mA
Max Power Dissipation
300 mW
Polarity
NPN
Transition Frequency
100 MHz

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