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Toshiba HN1B04FE-GR,LF

Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 80MHz 100mW Surface Mount ES6

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Compliance

RoHS
Compliant

Physical

Mount
Surface Mount

Technical

Collector Emitter Breakdown Voltage
50 V
Collector Emitter Voltage (VCEO)
250 mV
Max Breakdown Voltage
50 V
Max Collector Current
150 mA
Max Power Dissipation
100 mW
Packaging
Cut Tape (CT)
Transition Frequency
80 MHz

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