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Toshiba GT60M303(Q)

Trans IGBT Chip N-CH 900V 60A 170000mW 3-Pin(3+Tab) TO-3PL

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Compliance

Lead Free
Lead Free
Radiation Hardening
9256762
RoHS
Compliant

Physical

Mount
-55 °C
Number of Pins
3

Technical

Collector Emitter Breakdown Voltage
900 V
Collector Emitter Voltage (VCEO)
900 V
Element Configuration
Single
Max Collector Current
60 A
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Power Dissipation
170 W
Reverse Recovery Time
2.5 µs

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