主页产品分立半导体晶体管 IGBT GT60M303

Toshiba GT60M303

Name: GT60M303
Availability: OutOfStock

Trans IGBT Chip N-CH 900V 60A 3-Pin TO-3P(LH)

产品详情

Radiation Hardening

RoHS

Compliant

Mount

Through Hole

Number of Pins

Collector Emitter Voltage (VCEO)

900 V

Element Configuration

Single

Max Collector Current

60 A

Max Operating Temperature

150 °C

Min Operating Temperature

-55 °C

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