主页产品分立半导体晶体管 IGBT GT50JR22(STA1,E,S)

Toshiba GT50JR22(STA1,E,S)

Name: GT50JR22(STA1,E,S)
Availability: OutOfStock

Trans IGBT Chip N-CH 600V 50A 230000mW 3-Pin(3+Tab) TO-3PN Magazine

产品详情

Lead Free

RoHS

Compliant

Mount

Through Hole

Number of Pins

Collector Emitter Voltage (VCEO)

600 V

Element Configuration

Single

Max Collector Current

50 A

Max Operating Temperature

175 °C

Min Operating Temperature

-55 °C

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