跳转到主要内容

Toshiba GT50J325

Trans IGBT Chip N-CH 600V 50A 240000mW 3-Pin(3+Tab) TO-3PL

产品详情

Find similar products  

Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Physical

Mount
-55 °C
Number of Pins
3

Technical

Collector Emitter Breakdown Voltage
600 V
Collector Emitter Saturation Voltage
2.45 V
Collector Emitter Voltage (VCEO)
600 V
Element Configuration
Single
Max Collector Current
50 A
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Power Dissipation
240 W
Rise Time
70 ns

购买

Call or Request Quote for Pricing
询价

Need Assistance?

Contact Us