主页产品分立半导体晶体管 IGBT GT40QR21(STA1,E,D

Toshiba GT40QR21(STA1,E,D

Name: GT40QR21(STA1,E,D
Availability: OutOfStock

Trans IGBT Chip N-CH 1200V 40A 230000mW 3-Pin(3+Tab) TO-3PN Magazine

产品详情

Radiation Hardening

RoHS

Compliant

Mount

-55 °C

Number of Pins

Collector Emitter Voltage (VCEO)

1.2 kV

Element Configuration

Single

Max Collector Current

40 A

Max Operating Temperature

175 Â°C

Min Operating Temperature

175 °C

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