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Toshiba GT25Q102

IGBT, 1200V, TO-3P(LH); Transistor Type: IGBT; Transistor Polarity: N Channel; Voltage, Vces: 1200V; Current Ic...

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Compliance

RoHS
Compliant

Physical

Number of Pins
3

Technical

Collector Emitter Breakdown Voltage
1.2 kV
Collector Emitter Saturation Voltage
2.7 V
Collector Emitter Voltage (VCEO)
1.2 kV
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Power Dissipation
200 W
Rise Time
100 ns

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