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Toshiba 2SK3700(F)

Trans MOSFET N-CH Si 900V 5A 3-Pin(3+Tab) TO-3PN

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
2.5 Ω

Dimensions

Height
19 mm
Length
15.9 mm
Width
4.8 mm

Physical

Mount
-55 °C
Number of Pins
3

Technical

Continuous Drain Current (ID)
5:00 AM
Drain to Source Resistance
5 A
Drain to Source Voltage (Vdss)
2.5 Ω
Element Configuration
Single
Fall Time
60 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
1.15 nF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Bulk
Power Dissipation
150 W
Rds On Max
2.5 Ω
Rise Time
30 ns

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