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Toshiba 2SK3562

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)

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Compliance

RoHS
Compliant

Physical

Mount
-55 °C
Number of Pins
3

Technical

Continuous Drain Current (ID)
6:00 AM
Current
6 A
Drain to Source Resistance
6 A
Drain to Source Voltage (Vdss)
900 mΩ
Gate to Source Voltage (Vgs)
30 V
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
40 W
Threshold Voltage
4 V
Voltage
600 V

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