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Toshiba 2SK209-GR(TE85L,F)

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236

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Compliance

Radiation Hardening
No
RoHS
Compliant

Physical

Case/Package
TO-236-3
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Number of Pins
3

Technical

Continuous Drain Current (ID)
6.5 mA
Element Configuration
Single
Frequency
1 kHz
Gate to Source Voltage (Vgs)
-1.5 V
Max Operating Temperature
125 °C
Max Power Dissipation
150 mW
Min Operating Temperature
-55 °C
Noise Figure
1 dB
Test Current
500 µA
Test Voltage
10 V

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