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Toshiba 2SJ200-Y

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

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Compliance

Radiation Hardening
No
RoHS
Compliant

Physical

Mount
-55 °C
Number of Pins
3

Technical

Continuous Drain Current (ID)
10:00 AM
Gate to Source Voltage (Vgs)
10 A
Max Operating Temperature
150 °C
Min Operating Temperature
150 °C

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