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Toshiba 2SJ168(TE85L,F)

Trans MOSFET P-CH Si 60V 0.2A 3-Pin S-Mini T/R

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Compliance

Radiation Hardening
No
RoHS
2 Ω

Physical

Case/Package
TO-236-3
Mount
-55 °C
Number of Pins
3

Technical

Continuous Drain Current (ID)
200 mA
Drain to Source Resistance
1.3 Ω
Drain to Source Voltage (Vdss)
1.3 Ω
Fall Time
35 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
85 pF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
200 mW
Rds On Max
2 Ω
Rise Time
8 ns

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