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Toshiba 2SC6026MFVGR,L3F

Bipolar (BJT) Transistor NPN 50 V 150 mA 60MHz 150 mW Surface Mount VESM

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Compliance

RoHS
Compliant

Dimensions

Height
500 µm
Length
1.2 mm
Width
800 µm

Physical

Case/Package
SOT-723
Contact Plating
Silver, Tin
Mount
Surface Mount

Technical

Collector Base Voltage (VCBO)
60 V
Collector Emitter Breakdown Voltage
50 V
Collector Emitter Saturation Voltage
150 mV
Collector Emitter Voltage (VCEO)
50 V
Continuous Collector Current
150 mA
Emitter Base Voltage (VEBO)
5 V
Gain Bandwidth Product
60 MHz
hFE Min
550 µm
Max Breakdown Voltage
50 V
Max Collector Current
150 mA
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Tape & Reel (TR)
Polarity
NPN
Power Dissipation
150 mW
Transition Frequency
60 MHz

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