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Toshiba 2SC5200-O(Q)

Power Bipolar Transistor, 8A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
29 mm

Physical

Contact Plating
Copper, Silver, Tin
Mount
Through Hole
Number of Pins
3

Technical

Collector Base Voltage (VCBO)
230 V
Collector Emitter Breakdown Voltage
230 V
Collector Emitter Saturation Voltage
400 mV
Collector Emitter Voltage (VCEO)
230 V
Current Rating
15 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
30 MHz
Gain Bandwidth Product
30 MHz
hFE Min
55
Max Collector Current
15 A
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 W
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Bulk
Polarity
NPN
Power Dissipation
150 W
Transition Frequency
30 MHz
Voltage Rating (DC)
230 V

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