跳转到主要内容

Toshiba 2SC4213-B(TE85L,F)

Bipolar (BJT) Transistor NPN 20 V 300 mA 30MHz 100 mW Surface Mount USM

产品详情

Find similar products  

Compliance

RoHS
Compliant

Physical

Case/Package
SOT-323
Contact Plating
Silver, Tin
Mount
Surface Mount
Number of Pins
3

Technical

Collector Base Voltage (VCBO)
50 V
Collector Emitter Breakdown Voltage
20 V
Collector Emitter Saturation Voltage
42 mV
Collector Emitter Voltage (VCEO)
20 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
25 V
Frequency
30 MHz
Gain Bandwidth Product
30 MHz
hFE Min
200
Max Breakdown Voltage
20 V
Max Collector Current
300 mA
Max Operating Temperature
125 °C
Max Power Dissipation
100 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
100 mW
Transition Frequency
30 MHz

购买

Call or Request Quote for Pricing
询价

Need Assistance?

Contact Us