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Toshiba 2SC4213-A(TE85L,F)

Bipolar Transistors - BJT USM PLN TRANSISTOR Pd=100mW F=1MHz

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Compliance

RoHS
Compliant

Dimensions

Height
900 µm
Length
2 mm
Width
1.25 mm

Physical

Case/Package
SC
Mount
Surface Mount
Number of Pins
3

Technical

Collector Base Voltage (VCBO)
50 V
Collector Emitter Saturation Voltage
100 mV
Collector Emitter Voltage (VCEO)
20 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
25 V
Frequency
30 MHz
Max Collector Current
300 mA
Max Operating Temperature
125 °C
Max Power Dissipation
100 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
100 mW

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