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Toshiba 2SC2859-Y(TE85L,F)

Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon

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Compliance

Radiation Hardening
No
RoHS
Compliant

Physical

Case/Package
SOT-23-3
Mount
Surface Mount
Number of Pins
3

Technical

Collector Base Voltage (VCBO)
35 V
Collector Emitter Breakdown Voltage
30 V
Collector Emitter Saturation Voltage
100 mV
Collector Emitter Voltage (VCEO)
30 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
300 MHz
Gain Bandwidth Product
300 MHz
hFE Min
70
Max Breakdown Voltage
30 V
Max Collector Current
500 mA
Max Operating Temperature
125 °C
Max Power Dissipation
150 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Tape & Reel (TR)
Polarity
NPN
Power Dissipation
150 mW
Transition Frequency
300 MHz

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