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Toshiba 2SC2712-GR(TE85L,F

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

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Compliance

Radiation Hardening
No
RoHS
Compliant

Physical

Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Number of Pins
3

Technical

Collector Base Voltage (VCBO)
60 V
Collector Emitter Saturation Voltage
100 mV
Collector Emitter Voltage (VCEO)
50 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
80 MHz
Gain Bandwidth Product
80 MHz
hFE Min
200
Max Collector Current
125 °C
Max Operating Temperature
125 °C
Max Power Dissipation
-55 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
150 mW

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