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Toshiba 2SC2712-GR,LF

Bipolar (BJT) Transistor NPN 50 V 150 mA 80MHz 150 mW Surface Mount S-Mini

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Compliance

RoHS
Compliant

Physical

Case/Package
TO-236-3
Mount
Surface Mount

Technical

Collector Base Voltage (VCBO)
60 V
Collector Emitter Breakdown Voltage
50 V
Collector Emitter Saturation Voltage
100 mV
Collector Emitter Voltage (VCEO)
50 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Gain Bandwidth Product
80 MHz
Max Breakdown Voltage
50 V
Max Collector Current
150 mA
Max Operating Temperature
125 °C
Max Power Dissipation
150 mW
Min Operating Temperature
-55 °C
Packaging
Tape & Reel (TR)
Polarity
NPN
Transition Frequency
80 MHz

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