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Toshiba 2SA1312GRTE85LF

Transistor GP BJT PNP 120V 100mA 3-Pin TO-236MOD

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Physical

Case/Package
TO-236-3
Mount
Surface Mount
Number of Pins
3

Technical

Collector Base Voltage (VCBO)
-120 V
Collector Emitter Breakdown Voltage
120 V
Collector Emitter Voltage (VCEO)
300 mV
Element Configuration
Single
Emitter Base Voltage (VEBO)
-5 V
Gain Bandwidth Product
100 MHz
hFE Min
200
Max Breakdown Voltage
120 V
Max Collector Current
100 mA
Max Power Dissipation
150 mW
Packaging
Tape & Reel (TR)
Polarity
PNP
Transition Frequency
100 MHz

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