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Toshiba 2SA1312-BL(TE85L,F

Bipolar (BJT) Transistor PNP 120 V 100 mA 100MHz 150 mW Surface Mount S-Mini

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Compliance

Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
1.1 mm
Length
2.9 mm
Width
1.5 mm

Physical

Case/Package
SC
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Number of Pins
3

Technical

Collector Base Voltage (VCBO)
-120 V
Collector Emitter Breakdown Voltage
120 V
Collector Emitter Saturation Voltage
-300 mV
Collector Emitter Voltage (VCEO)
300 mV
Element Configuration
Single
Emitter Base Voltage (VEBO)
-5 V
Frequency
100 MHz
Gain Bandwidth Product
100 MHz
hFE Min
200
Max Breakdown Voltage
120 V
Max Collector Current
100 mA
Max Operating Temperature
125 °C
Max Power Dissipation
150 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Digi-Reel®
Polarity
Digi-Reel®
Power Dissipation
150 mW
Transition Frequency
100 MHz

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