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Toshiba 2SA1163-BL,LF

Bipolar (BJT) Transistor PNP 120 V 100 mA 100MHz 150 mW Surface Mount S-Mini

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Compliance

RoHS
Compliant

Physical

Case/Package
TO-236-3
Mount
Surface Mount
Number of Pins
3

Technical

Collector Base Voltage (VCBO)
120 V
Collector Emitter Breakdown Voltage
120 V
Collector Emitter Voltage (VCEO)
300 mV
Emitter Base Voltage (VEBO)
5 V
Max Breakdown Voltage
120 V
Max Collector Current
100 mA
Max Operating Temperature
125 °C
Max Power Dissipation
150 mW
Min Operating Temperature
-55 °C
Packaging
Cut Tape (CT)
Transition Frequency
100 MHz

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