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Texas Instruments CSD17575Q3

30-V, N channel NexFET power MOSFET, single SON 3 mm x 3 mm, 3.2 mOhm 8-VSON-CLIP

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Compliance

Lead Free
Contains Lead
RoHS
Compliant

Dimensions

Height
1.1 mm
Length
3.3 mm
Thickness
1 mm
Width
3.3 mm

Physical

Contact Plating
Tin
Mount
Surface Mount
Number of Pins
8

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
27 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
2.6 mΩ
Drain to Source Voltage (Vdss)
30 V
Element Configuration
Single
Fall Time
3 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
4.42 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2.8 W
Min Operating Temperature
-55 °C
Number of Channels
1
Packaging
Tape & Reel (TR)
Power Dissipation
2.8 W
Rds On Max
2.3 mΩ
Rise Time
10 ns
Turn-Off Delay Time
20 ns
Turn-On Delay Time
4 ns

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