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Taiwan Semiconductor TS7808CZ
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Compliance
REACH SVHC
No SVHC
RoHS
Compliant
Physical
Case/Package
TO-220
Number of Pins
3
Supply Chain
Lifecycle Status
NRND
Technical
Breakdown Voltage
51 V
Clamping Voltage
70.1 V
Collector Base Voltage (VCBO)
-40 V
Collector Emitter Saturation Voltage
-400 mV
Collector Emitter Voltage (VCEO)
50 V
Continuous Collector Current
-200 mA
Drain to Source Voltage (Vdss)
-60 V
Dropout Voltage
2 V
Emitter Base Voltage (VEBO)
40 V
Forward Voltage
1 V
Gain Bandwidth Product
1 MHz
Gate to Source Voltage (Vgs)
-1.5 V
hFE Min
100
Input Capacitance
436 pF
Max Breakdown Voltage
9.8 V
Max Forward Surge Current (Ifsm)
2.5 A
Max Input Voltage
35 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
125 °C
Max Repetitive Reverse Voltage (Vrrm)
250 V
Max Reverse Leakage Current
1 µA
Max Supply Voltage
35 V
Min Breakdown Voltage
25.4 V
Min Input Voltage
10.5 V
Min Operating Temperature
0 °C
Min Supply Voltage
2 V
Nominal Input Voltage
35 V
Nominal Output Voltage
8 V
Nominal Supply Current
25 nA
Number of Channels
2
Number of Outputs
1
Output Current
1:00 AM
Output Type
1 A
Output Voltage
8 V
Peak Pulse Current
21.4 A
Polarity
Positive
Power Dissipation
150 mW
Power Supply Rejection Ratio (PSRR)
72 dB
Quiescent Current
3 mA
Reference Voltage
1.25 V
Response Time
1.3 µs
Reverse Recovery Time
50 ns
Reverse Standoff Voltage
1.3 µs
Test Current
2.5 mA
Zener Voltage
75 V