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Taiwan Semiconductor TS358CS
产品详情
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Compliance
RoHS
Compliant
Physical
Case/Package
SOP
Supply Chain
Lifecycle Status
Production
Technical
Breakdown Voltage
51 V
Clamping Voltage
70.1 V
Collector Base Voltage (VCBO)
-40 V
Collector Emitter Saturation Voltage
-400 mV
Collector Emitter Voltage (VCEO)
50 V
Common Mode Rejection Ratio
65 dB
Continuous Collector Current
-200 mA
Drain to Source Voltage (Vdss)
-60 V
Emitter Base Voltage (VEBO)
40 V
Forward Voltage
1 V
Gain Bandwidth Product
1 MHz
Gate to Source Voltage (Vgs)
-1.5 V
hFE Min
100
Input Bias Current
250 nA
Input Capacitance
436 pF
Input Offset Voltage (Vos)
5 mV
Max Breakdown Voltage
9.8 V
Max Dual Supply Voltage
16 V
Max Forward Surge Current (Ifsm)
2.5 A
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
85 °C
Max Repetitive Reverse Voltage (Vrrm)
250 V
Max Reverse Leakage Current
1 µA
Max Supply Voltage
32 V
Min Breakdown Voltage
25.4 V
Min Dual Supply Voltage
1.5 V
Min Operating Temperature
-20 °C
Nominal Supply Current
1.2 mA
Number of Channels
2
Operating Supply Voltage
16 V
Output Current
40 mA
Peak Pulse Current
21.4 A
Power Dissipation
150 mW
Reverse Recovery Time
50 ns
Reverse Standoff Voltage
24 V
Test Current
2.5 mA
Voltage Gain
100 dB
Zener Voltage
75 V