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Taiwan Semiconductor MBR20200CT

Diode Schottky MBR20200/MBR20200CT TAIWAN SEMICONDUCTOR CO. RoHS Ampere=20 V=200 TO220

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Compliance

RoHS
Compliant

Physical

Case/Package
TO-220AB

Supply Chain

Lifecycle Status
Production

Technical

Element Configuration
Common Cathode
Forward Current
20 A
Forward Voltage
990 mV
Max Forward Surge Current (Ifsm)
150 A
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Repetitive Reverse Voltage (Vrrm)
150 °C
Max Reverse Leakage Current
100 µA
Max Surge Current
100 µA
Min Operating Temperature
-65 °C
Power Dissipation
-65 °C
Reverse Recovery Time
25 ns

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