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Taiwan Semiconductor HS1M R2

Diode; 1A; 1000V; Glass passivated; SMD placement; Plastic; UL 94V-O

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Compliance

Radiation Hardening
5 µA
RoHS
No

Dimensions

Height
2.3 mm
Length
4.6 mm
Width
2.83 mm

Physical

Case/Package
SMA
Mount
Surface Mount
Number of Pins
2

Supply Chain

Lifecycle Status
Production

Technical

Current
1 A
Element Configuration
Single
Forward Current
1 A
Forward Voltage
1.7 V
Max Forward Surge Current (Ifsm)
30 A
Max Operating Temperature
150 °C
Max Repetitive Reverse Voltage (Vrrm)
1 kV
Min Operating Temperature
-55 °C
Peak Non-Repetitive Surge Current
30 A
Peak Reverse Current
5 µA
Reverse Recovery Time
75 ns
Voltage
1 kV

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