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Taiwan Semiconductor BZT55C6V2
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Compliance
RoHS
Compliant
Dimensions
Height
1.8 mm
Length
10 Ω
Width
IBS
Physical
Case/Package
MELF
Mount
-65 °C
Number of Pins
2
Supply Chain
Lifecycle Status
Production
Technical
Breakdown Voltage
51 V
Clamping Voltage
70.1 V
Element Configuration
Single
Forward Voltage
1 V
Impedance
10 Ω
Max Breakdown Voltage
53.6 V
Max Forward Surge Current (Ifsm)
2.5 A
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
200 °C
Max Repetitive Reverse Voltage (Vrrm)
250 V
Max Reverse Leakage Current
1 µA
Min Breakdown Voltage
1 µA
Min Operating Temperature
-65 °C
Peak Pulse Current
21.4 A
Power Dissipation
500 mW
Reverse Recovery Time
50 ns
Reverse Standoff Voltage
43.6 V
Test Current
5 mA
Tolerance
5 %
Voltage Tolerance
6 %
Zener Voltage
6%