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STMicroelectronics STB9NK60ZT4

N-channel 600 V, 0.85 Ohm typ., 7 A Zener-protected SuperMESH(TM) Power MOSFET in D2PAK package

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
4.6 mm
Length
10.4 mm
Width
9.35 mm

Physical

Case/Package
D2PAK
Mount
Surface Mount
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
7 A
Current Rating
7 A
Drain to Source Breakdown Voltage
600 V
Drain to Source Resistance
950 mΩ
Drain to Source Voltage (Vdss)
600 V
Element Configuration
Single
Fall Time
15 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
1.11 nF
Max Operating Temperature
150 °C
Max Power Dissipation
125 W
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
125 W
Rds On Max
950 mΩ
Resistance
950 mΩ
Rise Time
17 ns
Threshold Voltage
3.75 V
Turn-Off Delay Time
43 ns
Turn-On Delay Time
19 ns
Voltage Rating (DC)
600 V

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