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STMicroelectronics IRF640

Mosfet, Power; N-channel; 0.15 Ohms (typ.); 200 V (min.) @ +25C; 200V; TO-220

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Compliance

Lead Free
Contains Lead
RoHS
Compliant

Physical

Case/Package
TO-220
Mount
Through Hole
Number of Pins
3

Technical

Continuous Drain Current (ID)
18 A
Current Rating
18 A
Drain to Source Breakdown Voltage
200 V
Drain to Source Resistance
180 mΩ
Drain to Source Voltage (Vdss)
200 V
Element Configuration
Single
Fall Time
25 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.56 nF
Max Operating Temperature
150 °C
Max Power Dissipation
125 W
Min Operating Temperature
-65 °C
Number of Elements
1
Power Dissipation
125 W
Rds On Max
180 mΩ
Rise Time
27 ns
Voltage Rating (DC)
200 V

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